#Fuji, #2DI30Z_120, #IGBT_Module, #IGBT, 2DI30Z-120 FUJI Power transistor module 30A/1200V/GTR
2DI30Z-120 Product details
Features
• High Voltage
• Including Free Wheeling Diode
• Excellent Safe Operating Area
• Insulated Type
Applications
• High Power Switching
• A.C Motor Controls
• D.C Motor Controls
• Uninterruptible Power Supply
Maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :30A
Collector current Icp 1ms Tc=25°C :60A
Collector power dissipation Pc:300W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.5 N·m