#Toshiba, #100L6P41, #IGBT_Module, #IGBT, Silicon diffused type rectifier module 6DIO 100A 800V
100L6P41 Description
100L6P41 Toshiba Powe Module
Three phase full wave bridge applications.
Features:
. Repetitive peak reverse voltage : Vrrm=800V
. Average output rectified current Tc=100°C Io= 100A
. Isolation voltage: 100L6p41-2000V AC
. Plastic mold package
Peak one cycle surge forward current(Non-repetitive) Ifsm 1000(50Hz)A
junction temperature Tj:-40~+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque M5 20 kg·cm
Isolation Voltage (AC, t=60sec) Visol 2500V
Peak forwerd voltage Vfm IFM=100A 1.2V
Repetitive peak reverse current Irrm Vrrm=rated, Tj=150°C 5 mA
Thermal resistance DC(total) 0.22 °C/W