#Fuji, #1D200A_020, #IGBT_Module, #IGBT, 1D200A-020 Power Bipolar Transistor, 200A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin; 1D200A-020
Manufacturer Part Number: 1D200A-020Part Life Cycle Code: ObsoleteIhs Manufacturer: FUJI ELECTRIC CO LTDPackage Description: FLANGE MOUNT, R-PUFM-X3ECCN Code: EAR99Manufacturer: Fuji Electric Co LtdRisk Rank: 5.82Case Connection: COLLECTORCollector Current-Max (IC): 200 ACollector-Emitter Voltage-Max: 300 VConfiguration: DARLINGTON WITH BUILT-IN DIODE AND RESISTORDC Current Gain-Min (hFE): 100Fall Time-Max (tf): 3000 nsJESD-30 Code: R-PUFM-X3Number of Elements: 1Number of Terminals: 3Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: NPNPower Dissipation Ambient-Max: 800 WPower Dissipation-Max (Abs): 800 WQualification Status: Not QualifiedRise Time-Max (tr): 2000 nsSubcategory: BIP General Purpose PowerSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: SWITCHINGTransistor Element Material: SILICONTurn-off Time-Max (toff): 15000 nsTurn-on Time-Max (ton): 2000 ns Power Bipolar Transistor, 200A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin