#Fuji, #1D500A_030A, #IGBT_Module, #IGBT, Power Bipolar Transistor, 500A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 6 Pin
Features
. High current
. High DC Current Gain
. Non Insulated Type
Applications
. High Power Switching
. Uninterruptible Power Supply
. DC Motor Controls
. Welding Machines
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:400V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :500A
Collector current Icp 1ms Tc=25°C :1000A
Collector power dissipation Pc:2500W
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 4.5 N·m
Weight 365g
Power Dissipation-Max (Abs) 2500.0 W
Qualification Status Not Qualified
Rise Time-Max (tr) 2000.0 ns
Sub Category BIP General Purpose Power
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Element Material SILICON
Turn-off Time-Max (toff) 16000.0 ns
Turn-on Time-Max (ton) 2000.0 ns