Fuji 1DI200Z-100 IGBT Module

1DI200Z-100 Description

1DI200Z-100 (200A) FUJI POWER TRANSISTOR

Features:

High Voltage

Including Free Wheeling Diode

Excellent Safe Operating Area

Applications:

Pover Switching

AC/DC Motor Controls

Uninterruptible Power Supply

Maximum Ratings and Characteristics:

Collector-emitter voltage Vces=1000V

Gate-emitter voltage Vges=±20V

Collector current DC IC=200A

Collector current 1ms ICP=400A

Forward current DC IF=12A

Forward current 1ms IFM=24A

collector power dissipation(Tc = 25°C) PC=1400W

Junction temperature Tj=150°C

Storage temperature range Tstg=−40 ~ 125 °C

Isolation voltage VIsol=2500V

200A/1000V/GTR/1U