#Fuji, #1DI300Z_120, #IGBT_Module, #IGBT, 1DI300Z-120 FUJI POWER TRANSISTOR MODULE 1GTR: 300A 1200V
1DI300Z-120 Description
1DI300Z-120 – a creation of Fuji that has enhanced the performance of countless high power switching applications today. This device is fully loaded with amazing features that cannot be spotted on those typical and weak models. It weighs 5.34 lbs. and generates power of up to 300 Amps of collector current and collector emitter voltage of 1200.One of the best features of 1DI300Z-120 is it’s ability to endure extreme temperatures. Whether on storage or junction temperature, this device can fully function with ease even at 150 oC. It also has an arrangement of 2 NPN silicon array transistors. With this component, it’s current rating dramatically improves and can be increased while maintaining safety and security to itself, to the application and even to nearby individuals.
Features
● High Voltage
● Including Free Wheeling Diode
● Excellent Safe Operating Area
● Insulated Type
Applications
● High Power Switching
● A.C Motor Controls
● D.C Motor Controls
● Uninterruptible Power Supply
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :300A
Collector current Icp 1ms Tc=25°C :600A
Collector current Ic Continuous Tc=80°C :16A
Collector current Icp 1ms Tc=80°C :32A
Collector power dissipation Pc:2000W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Weight 460g
Mounting screw torque M6 2.5~3.5 *1 N·m; M4 1.3~1.7*2 N·m