#Fuji, #1DI300ZP_120_05, #IGBT_Module, #IGBT, 1DI300ZP-120-05 Power Bipolar Transistor 300A I(C) 1200V V(BR)CEO 1-Element NPN Silicon Plastic/Epoxy 5 Pin; 1DI300ZP-12
Manufacturer Part Number: 1DI300ZP-120-05 Part Life Cycle Code: Obsolete Ihs Manufacturer: FUJI Risk Rank: 5.84 Collector Current-Max (IC): 300 A Collector-Emitter Voltage-Max: 1200 V Configuration: DARLINGTON, 3 TRANSISTORS WITH BUILT-IN DIODE AND RESISTOR DC Current Gain-Min (hFE): 100 Fall Time-Max (tf): 2000 ns JESD-30 Code: R-PUFM-X5 Number of Elements: 1 Number of Terminals: 5 Package Body Material: PLASTIC/EPOXY Package Shape: RECTANGULAR Package Style: FLANGE MOUNT Polarity/Channel Type: NPN Power Dissipation Ambient-Max: 2000 W Power Dissipation-Max (Abs): 2000 W Qualification Status: Not Qualified Rise Time-Max (tr): 3000 ns Subcategory: BIP General Purpose Power Surface Mount: NO Terminal Form: UNSPECIFIED Terminal Position: UPPER Transistor Element Material: SILICON Turn-off Time-Max (toff): 17000 ns Turn-on Time-Max (ton): 3000 ns Power Bipolar Transistor 300A I(C) 1200V V(BR)CEO 1-Element NPN Silicon Plastic/Epoxy 5 Pin