#Fuji, #1DI400A_120, #IGBT_Module, #IGBT, 1DI400A-120 FUJI High Power transistor module 400A 1200V GTR 1U
1DI400A-120 Product details
1-Pack BJT 1200 V 400 A
Features
High Voltage
Including Free Wheeling Diode
Excellent Safe Operation Area
Insulated Type
Applications
High Power Switching
A.C Motor Controls
D.C Motor Controls
Uninterruptible Power Supply
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :400A
Collector current Icp 1ms Tc=25°C :800A
Collector current Ic Continuous Tc=80°C :32A
Collector current Icp 1ms Tc=80°C :64A
Collector power dissipation Pc:3120W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Weight 830g
Mounting screw torque M6 3.5~4.0 *1 N·m; M4 1.4~1.6*2 N·m