#Fuji, #1MBI200L_120, #IGBT_Module, #IGBT, 1MBI200L-120 Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, M116, 4 PIN; 1MBI200L-120
Manufacturer Part Number: 1MBI200L-120Part Life Cycle Code: ObsoleteIhs Manufacturer: COLLMER SEMICONDUCTOR INCPackage Description: FLANGE MOUNT, R-XUFM-X4Pin Count: 4Manufacturer: Fuji Electric Co LtdRisk Rank: 5.84Additional Feature: HIGH SWITCHING SPEEDCollector Current-Max (IC): 200 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SINGLE WITH BUILT-IN DIODEJESD-30 Code: R-XUFM-X4Number of Elements: 1Number of Terminals: 4Package Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: POWER CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 1500 nsTurn-on Time-Nom (ton): 800 ns Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, M116, 4 PIN