#Fuji, #1MBI400N_120, #IGBT_Module, #IGBT, 1MBI400N-120 Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel, M127, 4 PIN; 1MBI400N-120
Manufacturer Part Number: 1MBI400N-120
Features
• Square RBSOA
• Low Saturation Voltage
• Less Total Power Dissipation
• Improved FWD Characteristic
• Minimized Internal Stray Inductance
• Overcurrent Limiting Function (4~5Times Rated Current)nn
Applications
• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply
Maximum ratings and characteristics
• Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :400A
Collector current Icp 1ms Tc=25°C :800A
Collector power dissipation Pc:3100W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.5 *1 N·m