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Fuji 1MBI600LN-060A IGBT Module

#Fuji, #1MBI600LN_060A, #IGBT_Module, #IGBT, Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel, M122, 4 PIN

· Categories: IGBT Module
· Manufacturer: Fuji
· Price: US$ 41
· Date Code: 2022+
. Available Qty: 339
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1MBI600LN-060A Specification

Sell 1MBI600LN-060A, #Fuji #1MBI600LN-060A Stock, Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel, M122, 4 PIN, #IGBT_Module, #IGBT, #1MBI600LN_060A
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/1mbi600ln-060a.html

Fuji 1MBI600LN-060A is a high-power insulated gate bipolar transistor (IGBT) module designed for use in power electronics applications.

1MBI600LN-060A is a high current rating 600 amperes & voltage rating 600 volts, suitable for use in a wide range of applications including motor drives, power supplies, and industrial automation equipment.

1MBI600LN-060A is constructed using advanced IGBT technology, which provides high performance, efficiency, and reliability. It features an integrated flywheel diode for efficient switching & protection against reverse voltage.

Fuji 1MBI600LN-060A is designed for easy installation & features a compact, lightweight design that allows it to be used in a variety of different configurations.

1MBI600LN-060A Features

. High speed switching

. Voltage drive

. Low inductance module structure

Applications

. Inverter for motor drive

. AC.DC servo drivo amplifier

. un nterruptible power suply

. Industrial machines. such as welding machines

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:600V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=80°C :600A

Collector current Icp 1ms Tc=80°C :1200A

Collector power dissipation Pc:2000W

Isolation Voltage VIsol (AC 1 minute) :2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 3.5 *1 N·m

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