#Fuji, #1MBI600LN_060A, #IGBT_Module, #IGBT, Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel, M122, 4 PIN
Fuji 1MBI600LN-060A is a high-power insulated gate bipolar transistor (IGBT) module designed for use in power electronics applications.
1MBI600LN-060A is a high current rating 600 amperes & voltage rating 600 volts, suitable for use in a wide range of applications including motor drives, power supplies, and industrial automation equipment.
1MBI600LN-060A is constructed using advanced IGBT technology, which provides high performance, efficiency, and reliability. It features an integrated flywheel diode for efficient switching & protection against reverse voltage.
Fuji 1MBI600LN-060A is designed for easy installation & features a compact, lightweight design that allows it to be used in a variety of different configurations.
1MBI600LN-060A Features
. High speed switching
. Voltage drive
. Low inductance module structure
Applications
. Inverter for motor drive
. AC.DC servo drivo amplifier
. un nterruptible power suply
. Industrial machines. such as welding machines
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:600V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=80°C :600A
Collector current Icp 1ms Tc=80°C :1200A
Collector power dissipation Pc:2000W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.5 *1 N·m