#Fuji, #1MBI600LP_060A, #IGBT_Module, #IGBT, Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel, M121, 4 PIN
1MBI600LP-060A is a high power insulated gate bipolar transistor (IGBT) module produced by Fuji Electric. It is designed for use in motor control, power supplies, and inverters high voltage and high current applications.
The 1MBI600LP-060A module has maximum collector current 600 amperes & maximum collector-emitter voltage 600 volts.
1MBI600LP-060A features low saturation voltage and fast switching speed, making it suitable for high-frequency switching applications.
1MBI600LP-060A packaged in a compact & durable package with built-in heatsink. It also has built-in temperature sensor use for thermal protection.
Features
. High speed switching
. Voltage drive
. Low inductance module structure
Applications
. Inverter for motor drive
. AC.DC servo drivo amplifier
. un nterruptible power suply
. Industrial machines. such as welding machines
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:600V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=80°C :600A
Collector current Icp 1ms Tc=80°C :1200A
Collector power dissipation Pc:2000W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.5 *1 N·m
Weight 370g