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Fuji 1MBI600PX-140 IGBT Module

#Fuji, #1MBI600PX_140, #IGBT_Module, #IGBT, 1MBI600PX-140 Insulated Gate Bipolar Transistor 800A I(C) 1400V V(BR)CES N-Channel M138 4 PIN; 1MBI600PX-140

· Categories: IGBT Module
· Manufacturer: Fuji
· Price: US$ 72
· Date Code: 2020+
. Available Qty: 264
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1MBI600PX-140 Specification

Sell 1MBI600PX-140, #Fuji #1MBI600PX-140 Stock, 1MBI600PX-140 Insulated Gate Bipolar Transistor 800A I(C) 1400V V(BR)CES N-Channel M138 4 PIN; 1MBI600PX-140, #IGBT_Module, #IGBT, #1MBI600PX_140
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/1mbi600px-140.html

Manufacturer Part Number: 1MBI600PX-140

Package Description: FLANGE MOUNT, R-XUFM-X4

Pin Count: 4

Manufacturer: Fuji Electric Co Ltd

Additional Feature: LOW SATURATION VOLTAGE

Case Connection: ISOLATED

Collector Current-Max (IC): 800 A

Collector-Emitter Voltage-Max: 1400 V

Configuration: SINGLE WITH BUILT-IN DIODE

Gate-Emitter Voltage-Max: 20 V

JESD-30 Code: R-XUFM-X4

Number of Elements: 1

Number of Terminals: 4

Operating Temperature-Max: 150 °C

Package Shape: RECTANGULAR

Package Style: FLANGE MOUNT

Polarity/Channel Type: N-CHANNEL

Power Dissipation-Max (Abs): 4100 W

Qualification Status: Not Qualified

Subcategory: Insulated Gate BIP Transistors

Surface Mount: NO

Terminal Position: UPPER

Transistor Application: POWER CONTROL

Transistor Element Material: SILICON

Turn-off Time-Nom (toff): 750 ns

Turn-on Time-Nom (ton): 950 ns

VCEsat-Max: 3.2 V

Insulated Gate Bipolar Transistor 800A I(C) 1400V V(BR)CES N-Channel M138 4 PIN

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