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Fuji 1MBI600UB-120 IGBT Module

1MBI600UB-120

#Fuji, #1MBI600UB_120, #IGBT_Module, #IGBT, 1MBI600UB-120 Insulated Gate Bipolar Transistor, 800A I(C), 1200V V(BR)CES, N-Channel, MODULE-4; 1MBI600UB-120

· Categories: IGBT Module
· Manufacturer: Fuji
· Price: US$
· Date Code: 2015+
. Available Qty: 2683
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1MBI600UB-120 Specification

Sell 1MBI600UB-120, #Fuji #1MBI600UB-120 Stock, 1MBI600UB-120 Insulated Gate Bipolar Transistor, 800A I(C), 1200V V(BR)CES, N-Channel, MODULE-4; 1MBI600UB-120, #IGBT_Module, #IGBT, #1MBI600UB_120
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Manufacturer Part Number: 1MBI600UB-120Part Life Cycle Code: ObsoleteIhs Manufacturer: FUJI ELECTRIC CO LTDPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X4Pin Count: 4Manufacturer: Fuji Electric Co LtdRisk Rank: 5.84Case Connection: ISOLATEDCollector Current-Max (IC): 800 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SINGLE WITH BUILT-IN DIODEJESD-30 Code: R-XUFM-X4Number of Elements: 1Number of Terminals: 4Package Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: POWER CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 370 nsTurn-on Time-Nom (ton): 360 ns Insulated Gate Bipolar Transistor, 800A I(C), 1200V V(BR)CES, N-Channel, MODULE-4

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