FUJI 1MBI600V-120 IGBT Module

FUJI IGBT 1MBI600V-120 is a high-performance insulated-gate bipolar transistor (IGBT) module designed and manufactured by FUJI Electric.

The module(1MBI600V-120) has a voltage rating 600V & maximum collector current 120A, it widely use for high-power applications such as motor control, power supplies, and renewable energy systems.

1MBI600V-120 built-in protection features such as short-circuit protection & over-temperature protection.

Features

. High speed switching

. Voltage drive

. Low Inductance module structure

Applications

. Inverter for Motor Drive

. AC and DC Servo Drive Amplifier

. Uninterruptible Power Supply

. Industrial machines, such as Welding machines

Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)

Collector-Emitter voltage VCES 1200V

Gate-Emitter voltage VGES ±20V

Collector current Ic pulse 1 ms 600 A

Collector current Ic pulse 1 ms 1200 A

Collector power dissipation Pc 1 device 3000 W

Junction temperature Tj 175°C

Operating junction temperature (under switching conditions) Tjop 150°C

Case temperature Tc 125°C

Storage temperature Tstg -40~+125°C

Isolation voltage Between terminal and copper base (*1) Viso AC : 1min. 2500 VAC

Screw torque Mounting(*2) M5 or M6 6.0 N.m