Fuji 1MBI600VF-120-50 IGBT Module

1MBI600VF-120-50 is a high-power semiconductor module that contains six insulated-gate bipolar transistor (IGBT) chips connected in parallel.

1MBI600VF-120-50 is part of Fuji's Intelligent Power Module (IPM) series, designed for use in high-power applications such as motor drives, power supplies, and inverters.

1MBI600VF-120-50 can handle maximum collector-emitter voltage 1200V & maximum collector current 600A, suitable for high-voltage and high-current applications. It features a built-in temperature sensor, allows for precise temperature monitoring and protection.

The "50" in the product code refers to the maximum operating temperature, which is 50 degrees Celsius.

1MBI600VF-120-50 Features

High speed switching

Voltage drive

Low Inductance module structure

Applications

Inverter for Motor Drive

AC and DC Servo Drive Amplifier

Uninterruptible Power Supply

Industrial machines, such as Welding machines

Maximum Ratings and Characteristics

Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic:600A

Collector current Icp:1200A

Collector power dissipation Pc:3000W

Collector-Emitter voltage VCES:2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 6.0 *2N·m

Fuji IGBT-module 600A/1200V/1 in one package