#Diodes, #2DB1132P_13, #IGBT_Module, #IGBT, 2DB1132P-13 Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, GREEN, PLASTIC PACKAGE-3; 2
Manufacturer Part Number: 2DB1132P-13Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: DIODES INCPackage Description: SMALL OUTLINE, R-PSSO-F3Pin Count: 3ECCN Code: EAR99Manufacturer: Diodes IncorporatedRisk Rank: 1.72Case Connection: COLLECTORCollector Current-Max (IC): 1 ACollector-Emitter Voltage-Max: 32 VConfiguration: SINGLEDC Current Gain-Min (hFE): 82JESD-30 Code: R-PSSO-F3JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: PNPPower Dissipation-Max (Abs): 1 WQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: FLATTerminal Position: SINGLETime Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, GREEN, PLASTIC PACKAGE-3