#Fuji, #2DI200_100, #IGBT_Module, #IGBT, 2di200-100 Power Bipolar Transistor 200A I(C) 300V V(BR)CEO 2-Element NPN Silicon Plastic/Epoxy 6 Pin;
Manufacturer Part Number: 2DI200A-020
Package Description:FLANGE MOUNT, R-PUFM-X6
ECCN Code: EAR99
Manufacturer: Fuji Electric Co Ltd
Case Connection: ISOLATED
Collector Current-Max (IC):200 A
Collector-Emitter Voltage-Max:300 V
Configuration:2 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE):100
Fall Time-Max (tf):3000 ns
JESD-30 Code:R-PUFM-X6
Number of Elements:2
Number of Terminals:6
Package Body Material:PLASTIC/EPOXY
Package Shape:RECTANGULAR
Package Style:FLANGE MOUNT
Polarity/Channel Type: NPN
Power Dissipation Ambient-Max:500 W
Power Dissipation-Max (Abs):500 W
Rise Time-Max (tr):2000 ns
Subcategory:BIP General Purpose Power
Surface Mount:NO
Terminal Form:UNSPECIFIED
Terminal Position:UPPER
Transistor Element Material:SILICON
Turn-off Time-Max (toff):15000 ns
Turn-on Time-Max (ton):2000 ns
Power Bipolar Transistor 200A I(C) 300V V(BR)CEO 2-Element NPN Silicon Plastic/Epoxy 6 Pin