#Fuji, #2DI30M_050, #IGBT_Module, #IGBT, 2DI30M-050 Power Bipolar Transistor, 30A I(C), 600V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 7 Pin, M208, 7 PIN
Manufacturer Part Number: 2DI30M-050Part Life Cycle Code: ObsoleteIhs Manufacturer: COLLMER SEMICONDUCTOR INCPackage Description: FLANGE MOUNT, R-PUFM-X7Manufacturer: Fuji Electric Co LtdRisk Rank: 5.81Collector Current-Max (IC): 30 ACollector-Emitter Voltage-Max: 600 VConfiguration: 2 BANKS, DARLINGTON, 3 TRANSISTORS WITH BUILT-IN DIODE AND RESISTORDC Current Gain-Min (hFE): 750JESD-30 Code: R-PUFM-X7Number of Elements: 2Number of Terminals: 7Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: NPNQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: SWITCHINGTransistor Element Material: SILICON Power Bipolar Transistor, 30A I(C), 600V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 7 Pin, M208, 7 PIN