#Fuji, #2DI75D_055A, #IGBT_Module, #IGBT, 2DI75D-055A FUJI Power Bipolar Transistor, 75A, 600V 2-Element, NPN, Silicon, Plastic/Epoxy, 7 Pin
Features
Including Free Wheeling Diode
High DC Current Gain
Insulated Type
600 volts class power transistor modules
Power transistors and free wheel diodes are built into one package.
All terminals are insulated from mounting plate.
Suited for motor control applications with 220 to 240 volts inputs.
All terminals are screw-clamp type.
Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:600V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :75A
Collector current Icp 1ms Tc=25°C :150A
Collector power dissipation Pc:350W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C