#FUJI, #2MBI100U4H_170, #IGBT_Module, #IGBT, 2MBI100U4H-170 Insulated Gate Bipolar Transistor 150A I(C) 1700V V(BR)CES N-Channel MODULE-4; 2MBI100U4H-170
Manufacturer Part Number: 2MBI100U4H-170
Part Life Cycle Code: Active
Ihs Manufacturer: FUJI ELECTRIC CO LTD
Part Package Code: MODULE
Package Description: FLANGE MOUNT, R-XUFM-X4
Pin Count: 4
Manufacturer: Fuji Electric Co Ltd
Risk Rank: 5.72
Collector Current-Max (IC): 150 A
Collector-Emitter Voltage-Max: 1700 V
Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE JESD-30
Operating Temperature-Max: 150 °C
Package Body Material: UNSPECIFIED
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Polarity/Channel Type: N-CHANNEL
Qualification Status: Not Qualified
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Transistor Element Material: SILICON
Turn-off Time-Nom (toff): 550 ns
Turn-on Time-Nom (ton): 620 ns
Insulated Gate Bipolar Transistor 150A I(C) 1700V V(BR)CES N-Channel MODULE-4