#Fuji, #2MBI100UA_120, #IGBT_Module, #IGBT, 2MBI100UA-120 Insulated Gate Bipolar Transistor 150A I(C) 1200V V(BR)CES N-Channel M232 7 PIN
Manufacturer Part Number: 2MBI100UA-120
Pin Count: 7
Manufacturer: Fuji Electric Co Ltd
Case Connection: ISOLATED
Collector Current-Max (IC): 150 A
Collector-Emitter Voltage-Max: 1200 V
Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max: 20 V
JESD-30 Code: R-XUFM-X7
Number of Elements: 2
Number of Terminals: 7
Operating Temperature-Max: 150 °C
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 600 W
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Transistor Application: POWER CONTROL
Transistor Element Material: SILICON
Turn-off Time-Nom (toff): 370 ns
Turn-on Time-Nom (ton): 360 ns
Insulated Gate Bipolar Transistor 150A I(C) 1200V V(BR)CES N-Channel M232 7 PIN