#FUJI, #2MBI200NB_120_01, #IGBT_Module, #IGBT, 2MBI200NB-120-01 FUJI Insulated Gate Bipolar Transistor 200A 1200V N-Channel MODULE-7
2MBI200NB-120-01 Product details
Features
• VCE(sat) classified for easy parallel connection
• High speed switching
• Voltage drive
• Low inductance module structure
Applications
• Inverter for Motor drive
• AC and DC Servo drive amplifier
• Uninterruptible power supply
• Industrial machines, such as Welding machines
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :200A
Collector current Icp 1ms Tc=25°C :400A
Collector power dissipation Pc:1500W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.5 *1 N·m