Fuji 2MBI200NB-120 IGBT Module

Fuji 2MBI200NB-120 is a power module designed for use in high power switching applications. It is part of the IGBT (Insulated Gate Bipolar Transistor) module family of Fuji, which combines the high-speed switching performance of a MOSFET with the high current handling capabilities of a bipolar transistor.

2MBI200NB-120 module features two IGBT chips connected in a half-bridge configuration, allowing it to handle up to 200A current & 1200V voltage. The module includes built-in protection features such as short-circuit protection & temperature sensing, which help to ensure safe and reliable operation.

This power module is commonly used in motor drives, UPS (Uninterruptible Power Supply) systems, welding equipment, & renewable energy systems.

Features

• Square RBSOA

• Low Saturation Voltage

• Less Total Power Dissipation

• Improved FWD Characteristic

• Minimized Internal Stray Inductance

• Overcurrent Limiting Function (4~5 Times Rated Current)

Applications

• High Power Switching

• A.C. Motor Controls

• D.C. Motor Controls

• Uninterruptible Power Supply

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic:200A

Collector current Icp:400A

Collector power dissipation Pc:1500W

Collector-Emitter voltage VCES:2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 3.5 *1 N·m