Fuji 2MBI200NK-060-01 IGBT Module

Fuji 2MBI200NK-060-01 power module, which is an insulated gate bipolar transistor (IGBT) module designed for high-power switching applications. Here's a summary of the key features and specifications you've mentioned:

Module Name: Fuji 2MBI200NK-060-01

Module Type: IGBT Power Module

Main Features:

• Designed for high-power switching applications.
• Contains two IGBT chips.
• Handles up to 200A of current and 600V of voltage.
• Compact size and low thermal resistance.
• Used in applications like motor control, power supplies, and welding equipment.
• Built-in protection circuitry for over-current, over-voltage, and over-temperature conditions.
• Square RBSOA (Reverse Bias Safe Operating Area).
• Low saturation voltage.
• Low total power dissipation.
• Improved forward voltage drop (FWD) characteristic.
• Minimized internal stray inductance.
• Overcurrent limiting function (up to ~3 times the rated current).

Maximum Ratings and Characteristics (Tc=25°C):

• Collector-Emitter Voltage (Vces): 600V
• Gate-Emitter Voltage (VGES): ±20V
• Collector Current (Ic): 200A
• Collector Current Peak (Icp): 400A
• Collector Power Dissipation (Pc): 780W
• Collector-Emitter Voltage (VCES): 2500V
• Operating Junction Temperature (Tj): +150°C
• Storage Temperature (Tstg): -40 to +125°C
• Mounting Screw Torque: 3.5 * 1 N·m

This module seems to offer a range of useful features and specifications for high-power switching applications, especially in scenarios where reliable protection, low power dissipation, and efficient operation are important.