#Fuji, #2MBI200U4D_120, #IGBT_Module, #IGBT, 2MBI200U4D-120 Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
Manufacturer Part Number: 2MBI200U4D-120
Part Life Cycle Code: End Of Life
Ihs Manufacturer: FUJI ELECTRIC CO LTD
Part Package Code: MODULE
Package Description: FLANGE MOUNT, R-XUFM-X7
Pin Count: 7
Manufacturer: Fuji Electric Co Ltd
Risk Rank: 5.72
Case Connection: ISOLATED
Collector Current-Max (IC): 300 A
Collector-Emitter Voltage-Max: 1200 V
Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 Code: R-XUFM-X7
Number of Elements: 2
Number of Terminals: 7
Operating Temperature-Max: 150 °C
Package Body Material: UNSPECIFIED
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Polarity/Channel Type: N-CHANNEL
Qualification Status: Not Qualified
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Transistor Element Material: SILICON
Turn-off Time-Nom (toff): 410 ns
Turn-on Time-Nom (ton): 320 ns
Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7