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Fuji 2MBI200U4D-120 IGBT Module

#Fuji, #2MBI200U4D_120, #IGBT_Module, #IGBT, 2MBI200U4D-120 Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

· Categories: IGBT Module
· Manufacturer: Fuji
· Price: US$ 47
· Date Code: 2024+
. Available Qty: 357
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2MBI200U4D-120 Specification

Sell 2MBI200U4D-120, #Fuji #2MBI200U4D-120 Stock, 2MBI200U4D-120 Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7, #IGBT_Module, #IGBT, #2MBI200U4D_120
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/2mbi200u4d-120.html

Manufacturer Part Number: 2MBI200U4D-120

Part Life Cycle Code: End Of Life

Ihs Manufacturer: FUJI ELECTRIC CO LTD

Part Package Code: MODULE

Package Description: FLANGE MOUNT, R-XUFM-X7

Pin Count: 7

Manufacturer: Fuji Electric Co Ltd

Risk Rank: 5.72

Case Connection: ISOLATED

Collector Current-Max (IC): 300 A

Collector-Emitter Voltage-Max: 1200 V

Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

JESD-30 Code: R-XUFM-X7

Number of Elements: 2

Number of Terminals: 7

Operating Temperature-Max: 150 °C

Package Body Material: UNSPECIFIED

Package Shape: RECTANGULAR

Package Style: FLANGE MOUNT

Polarity/Channel Type: N-CHANNEL

Qualification Status: Not Qualified

Surface Mount: NO

Terminal Form: UNSPECIFIED

Terminal Position: UPPER

Transistor Element Material: SILICON

Turn-off Time-Nom (toff): 410 ns

Turn-on Time-Nom (ton): 320 ns

Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

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