#Fuji, #2MBI200U4H_120_50, #IGBT_Module, #IGBT, Fuji IGBT-Module 1200V 200A
Transistor Polarity: N Channel
DC Collector Current: 200A
Collector Emitter Saturation Voltage Vce(on): 1200V
Gate Emitter voltage VGES ±20V
Collector current Ic Continuous Tc=25°C :300A
Collector current Ic Continuous Tc=80°C :200A
Collector current Icp 1ms Tc=25°C :600A
Collector current Icp 1ms Tc=80°C :400A
Collector power dissipation Pc:1040W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.5 *2 N·m