2MBI600VN-120-50 IGBT Module

The Fuji 2MBI600VN-120-50 IGBT Module is a high-performance, dual-package insulated-gate bipolar transistor (IGBT) designed for industrial applications requiring efficient power conversion and robust performance. It is part of Fuji Electric’s V-series, known for its reliability and advanced electrical characteristics.

Key Specifications:

• Collector-Emitter Voltage (V_CE): 1200V
• Collector Current (I_C): 600A
• Gate-Emitter Threshold Voltage (V_GE(th)): 6.0-7.0V
• Collector-Emitter Saturation Voltage (V_CE(sat)): 2.65-3.10V at 25°C
• Turn-on Time (t_on): 550-1200 ns
• Turn-off Time (t_off): 1050-2000 ns
• Input Capacitance (C_ies): 48 nF
• Thermal Resistance (R_th(j-c)): 0.04°C/W for IGBT, 0.06°C/W for FWD

Explanation of Parameters:

• Collector-Emitter Voltage (V_CE): This is the maximum voltage that can be applied across the collector and emitter terminals of the IGBT. A higher V_CE rating indicates the module’s ability to handle higher voltage applications without breakdown.
• Collector Current (I_C): This is the maximum continuous current the IGBT can conduct. The 600A rating means it can handle substantial power, making it suitable for heavy-duty applications like industrial motor drives and power inverters.
• Gate-Emitter Threshold Voltage (V_GE(th)): This voltage defines the threshold at which the IGBT begins to conduct. The range of 6.0-7.0V provides a clear switching point for control circuits.
• Collector-Emitter Saturation Voltage (V_CE(sat)): Lower saturation voltage translates to reduced conduction losses, which is critical for improving overall efficiency in power conversion systems.
• Turn-on and Turn-off Times (t_on, t_off): These parameters influence the switching speed of the IGBT. Faster switching reduces power losses during transitions, which is advantageous in high-frequency applications.
• Input Capacitance (C_ies): A lower capacitance generally implies faster switching capabilities, as it requires less charge to change the voltage at the gate terminal.
• Thermal Resistance (R_th(j-c)): This is a measure of the IGBT’s ability to dissipate heat. Lower thermal resistance ensures better heat management, which enhances reliability and extends the lifespan of the module.

Applications:

The 2MBI600VN-120-50 is ideal for high-power industrial applications such as:

• Motor Drives: Its high current capacity and efficiency make it suitable for driving large industrial motors, where reliable performance is critical.
• Power Inverters: The module’s ability to handle high voltages and currents makes it perfect for converting DC to AC power in renewable energy systems, such as solar inverters.
• Uninterruptible Power Supplies (UPS): The fast switching characteristics and low conduction losses are essential for maintaining efficiency and reliability in UPS systems.

In summary, the Fuji 2MBI600VN-120-50 IGBT Module is a robust and efficient choice for demanding industrial applications. Its advanced design features ensure minimal power losses, excellent heat dissipation, and reliable operation under high-stress conditions, making it a valuable component in high-power electronics.