#Fuji, #2MI100F_050, #IGBT_Module, #IGBT, 2MI100F-050 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,; 2MI100F-050
Manufacturer Part Number: 2MI100F050Part Life Cycle Code: ActiveIhs Manufacturer: FUJI ELECTRIC CO LTDPackage Description: ,Manufacturer: Fuji Electric Co LtdRisk Rank: 5.75Configuration: SingleDrain Current-Max (Abs) (ID): 100 AFET Technology: METAL-OXIDE SEMICONDUCTOROperating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 400 WSubcategory: FET General Purpose PowerSurface Mount: NO Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,