#Central Semiconductor Corp , #2N5116, #IGBT_Module, #IGBT, 2N5116 Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-18,; 2N5116
Manufacturer Part Number: 2N5116Pbfree Code: NoPart Life Cycle Code: ActiveIhs Manufacturer: CENTRAL SEMICONDUCTOR CORPPackage Description: CYLINDRICAL, O-MBCY-W3HTS Code: 8541.21.00.95Manufacturer: Central Semiconductor CorpRisk Rank: 0.8Configuration: SINGLEDrain-source On Resistance-Max: 150 ΩFET Technology: JUNCTIONFeedback Cap-Max (Crss): 7 pFJEDEC-95 Code: TO-18JESD-30 Code: O-MBCY-W3JESD-609 Code: e0Number of Elements: 1Number of Terminals: 3Operating Mode: DEPLETION MODEOperating Temperature-Max: 200 °CPackage Body Material: METALPackage Shape: ROUNDPackage Style: CYLINDRICALPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: P-CHANNELPower Dissipation-Max (Abs): 0.5 WQualification Status: Not QualifiedSubcategory: FET General Purpose Small SignalSurface Mount: NOTerminal Finish: Tin/Lead (Sn/Pb)Terminal Form: WIRETerminal Position: BOTTOMTime Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-18,