#ON , #2N6039G, #IGBT_Module, #IGBT, 2N6039G 4.0 A, 80 V NPN Darlington Bipolar Power Transistor, TO-225, 500-BLKBX; 2N6039G
Manufacturer Part Number: 2N6039GBrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPart Package Code: TO-225AAPackage Description: FLANGE MOUNT, R-PSFM-T3Pin Count: 3Manufacturer Package Code: 77-09ECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: ON SemiconductorRisk Rank: 0.68Collector Current-Max (IC): 4 ACollector-Emitter Voltage-Max: 80 VConfiguration: DARLINGTON WITH BUILT-IN DIODE AND RESISTORDC Current Gain-Min (hFE): 100JEDEC-95 Code: TO-225AAJESD-30 Code: R-PSFM-T3JESD-609 Code: e3Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): 260Polarity/Channel Type: NPNPower Dissipation-Max (Abs): 1.5 WQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: NOTerminal Finish: Tin (Sn)Terminal Form: THROUGH-HOLETerminal Position: SINGLETime 4.0 A, 80 V NPN Darlington Bipolar Power Transistor, TO-225, 500-BLKBX