MOTOROLA 2N6394TG IGBT Module

Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors

Designed primarily for half-wave ac control applications, such as motor controls,heating controls and power supplies.

•Glass Passivated Junctions with Center Gate Geometry for Greater ParameterUniformity and Stability

•Small, Rugged, Thermowatt Construction for Low Thermal Resistance, HighHeat Dissipation and Durability

•Blocking Voltage to 800 Volts

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)

Peak Repetitive Forward and Reverse Blocking Voltage (Gate Open, TJ = –40 to 125°C) VRRM 50V

RMS On–State Current (TC = 90°C) (All Conduction Angles) IT(RMS) 12Amps

Peak Non-Repetitive Surge Current(1/2 Cycle, Sine Wave, 60 Hz, TJ = 125°C) ITSM 100Amps

Circuit Fusing (t = 8.3 ms) I2t 40 A2s

Forward Peak Power PGM 20Watts

Forward Average Gate Power PG(AV) 0.5Watt

Forward Peak Gate Current IGM 2Amps

Operating Junction Temperature Range TJ-40 to +125°C

Storage Temperature Range Tstg-40 to +150°C