ON　 2SA2012-TD-E IGBT Module

Manufacturer Part Number: 2SA2012-TD-EBrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPin Count: 3Manufacturer Package Code: 419AUECCN Code: EAR99Manufacturer: ON SemiconductorRisk Rank: 1.49Collector Current-Max (IC): 5 AConfiguration: SingleDC Current Gain-Min (hFE): 200JESD-609 Code: e6Moisture Sensitivity Level: 1Operating Temperature-Max: 150 °CPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: PNPPower Dissipation-Max (Abs): 3.5 WSubcategory: Other TransistorsSurface Mount: YESTerminal Finish: Tin/Bismuth (Sn/Bi)Time Bipolar Transistor, -30V, -5A, Low VCE(sat) PNP Single PCP, SOT-89 / PCP-1, 1000-REEL