TOSHIBA 30Q6P45 IGBT Module

Manufacturer Part Number: 30Q6P45Rohs Code: NoPart Life Cycle Code: ObsoleteIhs Manufacturer: Toshiba CORPPart Package Code: SFMPackage Description: R-PSFM-T5Pin Count: 5HTS Code: 8541.10.00.80Manufacturer: Toshiba America electronic ComponentsRisk Rank: 5.88Case Connection: ISOLATEDConfiguration: BRIDGE, 6 ELEMENTSDiode Element Material: SILICONDiode Type: BRIDGE RECTIFIER DIODEForward Voltage-Max (VF): 1.3 VJESD-30 Code: R-PSFM-T5JESD-609 Code: e0Non-rep Pk Forward Current-Max: 330 ANumber of Elements: 6Number of Phases: 3Number of Terminals: 5Operating Temperature-Max: 150 °COperating Temperature-Min: -40 °COutput Current-Max: 30 APackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTQualification Status: Not QualifiedRep Pk Reverse Voltage-Max: 1200 VReverse Current-Max: 100 µAReverse Test Voltage: 1200 VSubcategory: Other DiodesSurface Mount: NOTerminal Finish: Tin/Lead (Sn/Pb)Terminal Form: THROUGH-HOLETerminal Position: SINGLE DIODE 3 PHASE, 30 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE, 12-46A1A, SIP-5, Bridge Rectifier Diode