55mΩ 600V mosfet in 10 x 12mm TOLL

TK055U60Z1 is the first of the 600V DTMOSVI series – there are already some 650V DTMOSVI parts.

Rds(on) is a 13% improvement over a similar devices in its earlier DTMOSIV-H series, claimed the company, and Rds(on) x Qgd is improved by ~52%.

As the data sheet has yet to be made public, the caveats associated with these figures cannot be included here.

Additional specs that have been revealed include a maximum channel temperature of 150°C, Typical Rds(on) of 47mΩ at 10Vgs, and typical charge figures of: 65nC total gate and 15nC gate-drain, plus 3.7nF input capacitance. “These factors will allow the new device to switch at the fastest possible speeds,” said Toshiba – aided by the separate Kelvin source connection for gate driving.

Another note on the packaging, it added, was: “The applied pin shaping ensures proper solder connections, increases mounting reliability and makes visual inspection easier.”

±30V can be tolerated on the gate with respect to the source, max drain current is 40A and up to 270W can be handled.

Applications are foreseen in switching power supplies in data centres, power conditioners for photovoltaic generators, and uninterruptible power systems.

Although no data sheet is yet linked, some more information can be found on the TK055U60Z1  product page