#ABB, #5SNA1000G450300, #IGBT_Module, #IGBT, 5SNA1000G450300 Insulated Gate Bipolar Transistor, 1000A I(C), 4500V V(BR)CES, N-Channel, HIPAK-9; 5SNA1000G450300
Manufacturer Part Number: 5SNA1000G450300Part Life Cycle Code: ActiveIhs Manufacturer: ABB LTDPackage Description: FLANGE MOUNT, R-XUFM-X9Pin Count: 9Manufacturer: ABB SemiconductorsRisk Rank: 5.68Case Connection: ISOLATEDCollector Current-Max (IC): 1000 ACollector-Emitter Voltage-Max: 4500 VConfiguration: COMPLEXJESD-30 Code: R-XUFM-X9Number of Elements: 3Number of Terminals: 9Operating Temperature-Max: 125 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Element Material: SILICONTurn-off Time-Nom (toff): 2370 nsTurn-on Time-Nom (ton): 740 ns Insulated Gate Bipolar Transistor, 1000A I(C), 4500V V(BR)CES, N-Channel, HIPAK-9