ABB 5STP04D4000132 IGBT Module

Feature

• Patented free-floating silicon technology
• L ow on-state and switching losses
• Designed for traction, energy and industrial applications
• Optimum power handling capability
• Interdigitated amplifying gate

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:4000V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=25°C :470A

Collector current Icp 1ms Tc=25°C :740A

Collector power dissipation Pc:3W

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Slope resistance rT Tj= 125°C 1.5 m Ω

Weigh 300g