FUJI 6MBI150U4B-120-50 IGBT Module

Maximum Ratings (Tc=25°C unless otherwise specified):

• Collector-Emitter Voltage (Vces): 1200V
• Gate-Emitter Voltage (VGES): ±20V
• Collector Current (Ic): 150A
• Collector Current - Pulsed (Icp): 300A
• Collector Power Dissipation (Pc): 735W
• Maximum Collector-Emitter Voltage (VCES): 2500V
• Operating Junction Temperature (Tj): +150°C
• Storage Temperature (Tstg): -40 to +125°C

Mounting Specification:

• Mounting Screw Torque (M5 screw): 3.5 N·m

These specifications define the operating limits and capabilities of the power semiconductor module. They indicate the maximum values that the module can handle under specific conditions. It's important to adhere to these maximum ratings to ensure safe and reliable operation of the module in various applications.