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FUJI 6MBI75UC-120 IGBT Module

6MBI75UC-120

#FUJI, #6MBI75UC_120, #IGBT_Module, #IGBT, 6MBI75UC-120 Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-34; 6MBI75UC-120

· Categories: IGBT Module
· Manufacturer: FUJI
· Price: US$
· Date Code: 11+
. Available Qty: 202
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6MBI75UC-120 Specification

Sell 6MBI75UC-120, #FUJI #6MBI75UC-120 Stock, 6MBI75UC-120 Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-34; 6MBI75UC-120, #IGBT_Module, #IGBT, #6MBI75UC_120
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/6mbi75uc-120.html

Manufacturer Part Number: 6MBI75UC-120

Part Life Cycle Code: Active

Ihs Manufacturer: FUJI ELECTRIC CO LTD

Part Package Code: MODULE

Package Description: FLANGE MOUNT, R-XUFM-X34

Pin Count: 34

Manufacturer: Fuji Electric Co Ltd

Risk Rank: 5.73

Case Connection: ISOLATED

Collector Current-Max (IC): 100 A

Collector-Emitter Voltage-Max: 1200 V

Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

JESD-30 Code: R-XUFM-X34

Number of Elements: 6

Number of Terminals: 34

Operating Temperature-Max: 150 °C

Package Body Material: UNSPECIFIED

Package Shape: RECTANGULAR

Package Style: FLANGE MOUNT

Polarity/Channel Type: N-CHANNEL

Qualification Status: Not Qualified

Surface Mount: NO

Terminal Form: UNSPECIFIED

Terminal Position: UPPER

Transistor Application: POWER CONTROL

Transistor Element Material: SILICON

Turn-off Time-Nom (toff): 370 ns

Turn-on Time-Nom (ton): 360 ns

Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-34

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