#FUJI, #6MBP150VEA120_50, #IGBT_Module, #IGBT, FUJI IGBT MODULE (V series)1200V / 150A / IPM
Features
• Temperature protection provided by directly detecting the junction temperature of the IGBTs
• Low power loss and soft switching
• High performance and high reliability IGBT with overheating protection
• Higher reliability because of a big decrease in number of parts in built-in control Circuit
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic:150A
Collector current Icp:300A
Collector power dissipation Pc:781W
Collector-Emitter voltage VCES:2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.5*1 N·m