#FUJI, #7MBI40N_120, #IGBT_Module, #IGBT, FUJI IGBT-Module 1200V / 40A (7 in one-package) MODULE (N-series)
The FUJI 7MBI40N-120 is a power module consisting of 7 insulated-gate bipolar transistor (IGBT) chips in parallel configuration, capable of handling maximum collector-emitter voltage 1200V, maximum collector current 40A.
FUJI module 7MBI40N-120 is commonly used in high power applications such as motor drives, power supplies & welding equipment. The package type for the module is 62mm-wide, flat-base type.
Fuji 7MBI40N-120 Features
• Including Brake Chopper
• Square RBSOA
• Low Saturation Voltage
• Overcurrent Limiting Function( 4 ~ 5 Times Rated Current )
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic:40A
Collector current Icp:80A
Collector power dissipation Pc:320W
Collector-Emitter voltage VCES:2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.5*1 N·m