FUJI 7MBI40N-120 IGBT Module

The FUJI 7MBI40N-120 is a power module consisting of 7 insulated-gate bipolar transistor (IGBT) chips in parallel configuration, capable of handling maximum collector-emitter voltage 1200V, maximum collector current 40A.

FUJI module 7MBI40N-120 is commonly used in high power applications such as motor drives, power supplies & welding equipment. The package type for the module is 62mm-wide, flat-base type.

Fuji 7MBI40N-120 Features

• Including Brake Chopper

• Square RBSOA

• Low Saturation Voltage

• Overcurrent Limiting Function( 4 ~ 5 Times Rated Current )

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic:40A

Collector current Icp:80A

Collector power dissipation Pc:320W

Collector-Emitter voltage VCES:2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 3.5*1 N·m