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Fuji 7MBP100NA060-01 IGBT Module

#Fuji, #7MBP100NA060_01, #IGBT_Module, #IGBT, 7MBP100NA060-01 Insulated Gate Bipolar Transistor 100A I(C) 600V V(BR)CES N-Channel;

· Categories: IGBT Module
· Manufacturer: Fuji
· Price: US$ 45
· Date Code: 2021+
. Available Qty: 79
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7MBP100NA060-01 Specification

Sell 7MBP100NA060-01, #Fuji #7MBP100NA060-01 Stock, 7MBP100NA060-01 Insulated Gate Bipolar Transistor 100A I(C) 600V V(BR)CES N-Channel;, #IGBT_Module, #IGBT, #7MBP100NA060_01
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/7mbp100na060-01.html

Manufacturer Part Number: 7MBP100NA060-01

Package Description: FLANGE MOUNT, R-PUFM-X22

Manufacturer: Fuji Electric Co Ltd

Additional Feature: HIGH RELIABILITY

Collector Current-Max (IC): 100 A

Collector-Emitter Voltage-Max: 600 V

Configuration: COMPLEX

JESD-30 Code: R-PUFM-X22

Number of Elements: 7

Number of Terminals: 22

Operating Temperature-Max: 150 °C

Package Body Material: PLASTIC/EPOXY

Package Shape: RECTANGULAR

Package Style: FLANGE MOUNT

Polarity/Channel Type: N-CHANNEL

Subcategory: Insulated Gate BIP Transistors

Surface Mount: NO

Terminal Position: UPPER

Transistor Element Material: SILICON

Turn-off Time-Nom (toff): 3600 ns

Turn-on Time-Nom (ton): 300 ns

VCEsat-Max: 2.9 V

Insulated Gate Bipolar Transistor 100A I(C) 600V V(BR)CES N-Channel

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