#Fuji, #7MBP100NA060, #IGBT_Module, #IGBT, 7MBP100NA060 Insulated Gate Bipolar Transistor 100A I(C) 600V V(BR)CES N-Channel;
Manufacturer Part Number: 7MBP100NA060
Package Description: FLANGE MOUNT, R-PUFM-X22
Manufacturer: Fuji Electric Co Ltd
Additional Feature: HIGH RELIABILITY
Collector Current-Max (IC): 100 A
Collector-Emitter Voltage-Max: 600 V
Configuration: COMPLEX
JESD-30 Code: R-PUFM-X22
Number of Elements: 7
Number of Terminals: 22
Operating Temperature-Max: 150 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Polarity/Channel Type: N-CHANNEL
Qualification Status: Not Qualified
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Transistor Element Material: SILICON
Turn-off Time-Nom (toff): 3600 ns
Turn-on Time-Nom (ton): 300 ns
VCEsat-Max: 2.9 V
Insulated Gate Bipolar Transistor 100A I(C) 600V V(BR)CES N-Channel