#Fuji, #7MBR100SD060, #IGBT_Module, #IGBT, 7MBR100SD060 Silicon Controlled Rectifier 157A I(T)RMS 800V V(DRM) 800V V(RRM) 1 Element MODULE-26
Fuji 7MBR100SD060 is a power semiconductor module designed for use in high power electronic applications. It is a member of the Fuji Electric IGBT module series and is designed to provide reliable, high-performance switching capabilities for a variety of industrial and commercial applications.
7MBR100SD060 module features six insulated-gate bipolar transistor (IGBT) power devices, each with a maximum collector current rating of 100A, and a maximum collector-emitter voltage of 600V. The module also includes a built-in driver circuit, which simplifies the design and implementation of IGBT-based power electronics systems.
7MBR100SD060 module is designed to provide excellent thermal performance, with a low thermal resistance between the power devices and the baseplate. This enables the module to handle high power loads while maintaining safe operating temperatures.
Manufacturer Part Number: #7MBR100SD060
Features
Low VCE(sat)
Compact Package
P.C.Board Mount Module
Converter Diode Bridge Dynamic Brake Circuit
RoHS compliant product
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:600V
Gate-Emitter voltage VGES:±20V
Collector current Ic:100A
Collector current Icp:200A
Collector power dissipation Pc:400W
Collector-Emitter voltage VCES:800V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.5 *1 N·m
Silicon Controlled Rectifier 157A I(T)RMS 800V V(DRM) 800V V(RRM) 1 Element MODULE-26