FUJI 7MBR100U4B120-54 IGBT Module

The 7MBR100U4B120 is an Insulated Gate Bipolar Transistor (IGBT) module designed by Fuji Electric Co Ltd. It features a collector current rating of 100A and a collector-emitter voltage rating of 1200V. This N-channel IGBT module comes in a RoHS-compliant package with 24 pins.

Key Specifications:

Collector Current-Max (IC): 100 A

Collector-Emitter Voltage-Max: 1200 V

Package Description: Flange Mount, R-XUFM-X24

Pin Count: 24

Case Connection: Isolated

Package Style: Flange Mount

Polarity/Channel Type: N-Channel

Number of Elements: 7

Terminal Position: Upper

Applications:

Industrial motor drives

Inverters and converters

Power electronic systems

Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=25°C :100A

Collector current Icp 1ms Tc=25°C :200A

Collector power dissipation Pc:390W

Isolation Voltage VIsol (AC 1 minute) :2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 3.5 *3 N·m