FUJI 7MBR100U4B120 IGBT Module

The 7MBR100U4B120 is an Insulated Gate Bipolar Transistor (IGBT) module designed by Fuji Electric Co Ltd. It features a collector current rating of 100A and a collector-emitter voltage rating of 1200V. This N-channel IGBT module comes in a RoHS-compliant package with 24 pins.

Key Specifications:

• Collector Current-Max (IC): 100 A
• Collector-Emitter Voltage-Max: 1200 V
• Package Description: Flange Mount, R-XUFM-X24
• Pin Count: 24
• Case Connection: Isolated
• Package Style: Flange Mount
• Polarity/Channel Type: N-Channel
• Number of Elements: 7
• Terminal Position: Upper

Applications:

• Industrial motor drives
• Inverters and converters
• Power electronic systems

Absolute maximum ratings (Tc=25°C unless without specified)

• Collector-Emitter voltage Vces:1200V
• Gate-Emitter voltage VGES:±20V
• Collector current Ic Continuous Tc=25°C :100A
• Collector current Icp 1ms Tc=25°C :200A
• Collector power dissipation Pc:390W
• Isolation Voltage VIsol (AC 1 minute) :2500V
• Operating junction temperature Tj:+150°C
• Storage temperature Tstg :-40 to +125°C
• Mounting screw torque 3.5 *3 N·m