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Fuji 7MBR25NE120 IGBT Module

#Fuji, #7MBR25NE120, #IGBT_Module, #IGBT, 7MBR25NE120 Insulated Gate Bipolar Transistor 25A I(C) 1200V V(BR)CES N-Channel MODULE-21;

· Categories: IGBT Module
· Manufacturer: Fuji
· Price: US$ 31
· Date Code: 2021+
. Available Qty: 175
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7MBR25NE120 Specification

Sell 7MBR25NE120, #Fuji #7MBR25NE120 Stock, 7MBR25NE120 Insulated Gate Bipolar Transistor 25A I(C) 1200V V(BR)CES N-Channel MODULE-21; , #IGBT_Module, #IGBT, #7MBR25NE120
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/7mbr25ne120.html

Manufacturer Part Number: #7MBR25NE120

Part Package Code: MODULE

Package Description: FLANGE MOUNT, R-XUFM-X21

Pin Count: 21

Manufacturer: Fuji Electric Co Ltd

Additional Feature: 3 PHASE DIODE RECTIFIER, BRAKE AND INVERTER AVAILABLE IN A MODULE

Case Connection: ISOLATED

Collector Current-Max (IC): 25 A

Collector-Emitter Voltage-Max: 1200 V

Configuration: COMPLEX

Gate-Emitter Voltage-Max: 20 V

JESD-30 Code: R-XUFM-X21

Operating Temperature-Max: 150 °C

Package Body Material: UNSPECIFIED

Package Shape: RECTANGULAR

Package Style: FLANGE MOUNT

Polarity/Channel Type: N-CHANNEL

Subcategory: Insulated Gate BIP Transistors

Terminal Form: UNSPECIFIED

Terminal Position: UPPER

Transistor Application: POWER CONTROL

Transistor Element Material: SILICON

Turn-off Time-Nom (toff): 1500 ns

Turn-on Time-Nom (ton): 1200 ns

VCEsat-Max: 3.3 V

Insulated Gate Bipolar Transistor 25A I(C) 1200V V(BR)CES N-Channel MODULE-21

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