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FUJI 7MBR25UA120 IGBT Module

7MBR25UA120

#FUJI, #7MBR25UA120, #IGBT_Module, #IGBT, 7MBR25UA120 Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, MODULE-24; 7MBR25UA120

· Categories: IGBT Module
· Manufacturer: FUJI
· Price: US$
· Date Code: 11+
. Available Qty: 76
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7MBR25UA120 Specification

Sell 7MBR25UA120, #FUJI #7MBR25UA120 Stock, 7MBR25UA120 Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, MODULE-24; 7MBR25UA120, #IGBT_Module, #IGBT, #7MBR25UA120
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/7mbr25ua120.html

Manufacturer Part Number: 7MBR25UA120Part Life Cycle Code: ObsoleteIhs Manufacturer: FUJI ELECTRIC CO LTDPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X24Pin Count: 24Manufacturer: Fuji Electric Co LtdRisk Rank: 5.83Case Connection: ISOLATEDCollector Current-Max (IC): 25 ACollector-Emitter Voltage-Max: 1200 VConfiguration: COMPLEXJESD-30 Code: R-XUFM-X24Number of Elements: 7Number of Terminals: 24Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: POWER CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 370 nsTurn-on Time-Nom (ton): 410 ns Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, MODULE-24

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