#Fuji, #7MBR50SB120_50, #IGBT_Module, #IGBT, 7MBR50SB120-50 FUJI ELECTRIC IGBT Module Transistor Semitrans N Channel 75A 360W 1200V Module;
Features
. Low Vce(sat)
. Compact package
. P.C board mount
. Converter diode, Dynamic brake circuit
Applications
. Inverter for motor drive
. AC and DC servo drive amplifier
. Uninterruptible power supply
Collector Emitter Voltage V(br)ceo: 1200V
Collector Emitter Voltage Vces: ±20V
DC Collector Current: 75A
No. of Pins: 24
Operating Temperature Max: 150°C
Power Dissipation Pd: 360W
SVHC: To Be Advised
Transistor Case Style: Module
Transistor Polarity: N Channel