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The BSM25GD120DN2E is a high-performance insulated gate bipolar transistor (IGBT) module, primarily utilized in high-voltage switching applications. Manufactured by EUPEC, a subsidiary of Infineon Technologies, this module is instrumental in converting electricity into more usable forms, playing a crucial role in applications ranging from electric vehicles to renewable energy systems.
The module’s advanced design, including a Partial Narrow Mesa (PNW) structure and superjunction configuration, enhances its efficiency by reducing the on-state voltage drop and improving blocking capability while minimizing turn-off losses. The BSM25GD120DN2E is particularly notable for its adherence to stringent industrial standards, having passed rigorous tests under IEC 60747, 60749, and 60068, which validate its reliability and longevity in demanding conditions. This makes it a preferred choice for applications in sectors such as industrial drives, servo controls, EV charging stations, and renewable energy systems like solar inverters and wind turbines. Its robustness and efficiency align with the growing global emphasis on energy-efficient and sustainable technologies. One of the distinguishing features of the BSM25GD120DN2E is its integration of advanced thermal interface materials and support for lead-free, solder-less mounting techniques, such as PressFIT pins, which enhance its thermal management and ease of installation.
These innovations not only contribute to the module’s high performance but also support environmental sustainability by using materials and production techniques that minimize ecological impact. The module’s market presence is reinforced by its availability through various electronic component distributors, ensuring that it can be easily procured for industrial applications. Infineon’s extensive portfolio and continuous innovation in IGBT technology further underscore the BSM25GD120DN2E’s role in driving advancements in power electronics.
As the semiconductor industry evolves, the module’s integration of new materials and design solutions promises sustained improvements in performance and efficiency, positioning it as a critical component in future power conversion and management systems.
The BSM25GD120DN2E is a type of insulated gate bipolar transistor (IGBT) module, specifically designed for high-voltage switching applications. IGBT modules are crucial for converting electricity from one form to another, ensuring that it can be more conveniently and safely utilized by various digital devices. This is particularly important in applications such as electric vehicles, where conversion losses can impact range and performance . The BSM25GD120DN2E is known for its technical specifications and attributes that qualify it for industrial applications, according to the tests of IEC 60747, 60749, and 60068 . These rigorous standards ensure the reliability and longevity of the module under demanding conditions. Furthermore, the device is part of Infineon’s extensive portfolio, which includes general-purpose drives, servo drives, EV charging, and renewable energy applications such as solar inverters and wind energy systems .
One notable feature of the BSM25GD120DN2E is its utilization of a Partial Narrow Mesa (PNW) structure combined with a superjunction (SJ) configuration. This innovative design enhances carrier concentration near the cathode side, reducing the on-state voltage drop and improving blocking capability while minimizing turn-off loss . These advancements make it an ideal choice for energy-efficient electronic appliances, aligning with the growing demand for such technologies .
The BSM25GD120DN2E is a power module specifically designed for high-efficiency applications. It includes various components and features that enhance its performance in demanding industrial settings.
The BSM25GD120DN2E is manufactured by EUPEC and falls under the category of insulated gate bipolar transistor (IGBT) modules. This device is encapsulated in a module package, which includes features such as fast free-wheel diodes and a 3-phase full-bridge configuration, contributing to its robust performance .
The module operates with a collector-emitter voltage and collector-gate voltage that ensures reliable operation under various conditions. The gate-emitter voltage is maintained with a resistance of 20 kΩ to enhance control and stability .
Infineon’s IGBT modules, including the BSM25GD120DN2E, are known for their high performance and reliability. These modules are qualified for industrial applications based on rigorous testing in compliance with IEC standards 60747, 60749, and 60068 .
To facilitate integration and usability, the BSM25GD120DN2E is designed to be part of evaluation kits and reference designs provided by Infineon, enabling developers to optimize their applications effectively . The module’s versatility is further evidenced by its compatibility with various gate drivers, enhancing the interface between control signals and power switches .
The design and production of the BSM25GD120DN2E also take into account environmental sustainability. Recent trends in semiconductor manufacturing emphasize the use of sustainable materials and efficient production techniques to reduce the environmental impact .
For procurement, the BSM25GD120DN2E can be ordered in combination with a full reel and cut tape, ensuring flexibility in supply chain management. It is essential to order in multiples matching the manufacturer’s full reel quantity to ensure compliance and consistency in quality .
The BSM25GD120DN2E is a power module that incorporates Insulated Gate Bipolar Transistors (IGBTs), which are critical components in high-performance power conversion circuitry. IGBTs are preferred in medium to high-power applications due to their ability to combine the simple gate-drive characteristics of power MOSFETs with the high-current and low-saturation-voltage capability of bipolar transistors. This combination makes them ideal for use in consumer electronics, industrial technology, the energy sector, aerospace electronic devices, and transportation. The device comprises an isolated-gate Field Effect Transistor (FET) for the control input and a bipolar power transistor as a switch in a single component. This configuration allows for the control of high currents and blocking voltages up to 6500 V, making it suitable for controlling loads of hundreds of kilowatts. One notable feature of the BSM25GD120DN2E is the use of thermal interface materials that outperform general-purpose materials available on the market.
These materials are specifically developed and pre-applied to Infineon’s power modules, providing better performance under higher temperatures and new applications. This ensures that the power module can meet the ever-evolving reliability and connection technology requirements of power electronics customers. Additionally, the BSM25GD120DN2E does not inherently include a freewheeling or body diode by design, which is necessary to protect the switch and provide a path to prevent reverse current. This is crucial in maintaining the device’s efficiency and reliability in various high-power applications. Furthermore, advancements in semiconductor materials, particularly the transition towards in-house design for personalized chip design and the integration of multi-component architectures, have been incorporated into the design of the BSM25GD120DN2E. These innovations not only enhance performance but also align with sustainable manufacturing efforts to balance rapid innovation with ecological considerations.
The BSM25GD120DN2E is an advanced Insulated Gate Bipolar Transistor (IGBT) power module designed for high-efficiency performance in power electronic applications. This power module operates with a collector-emitter voltage and includes fast free-wheeling diodes, which are essential for efficient power conversion and energy management in various industrial and automotive applications.
The BSM25GD120DN2E leverages the latest IGBT and Free-Wheeling Diode (FWD) design trends, pushing the performance limits of silicon IGBT technology. The module’s structure allows for a reduction in saturation voltage, thereby enhancing the Vce(sat)-Eoff trade-off, which is crucial for minimizing power losses during switching operations. These improvements contribute to the module’s high efficiency, making it suitable for applications where power density and energy efficiency are paramount. The module’s operation is influenced by the total switching loss (Ets), which is the sum of the turn-on (Eon) and turn-off (Eoff) losses. Although Eon is often overlooked due to the dominance of the co-packaged rectifier, it is important to consider both Eon and Eoff to accurately assess the device’s impact on overall system performance.
Additionally, the BSM25GD120DN2E’s gate driver integration is crucial for optimal operation. Gate drivers serve as the interface between control signals and power switches, such as IGBTs, ensuring efficient signal transmission and isolation between different functional circuits. The BSM25GD120DN2E is also characterized by its rugged structure, which can withstand high voltages and currents, making it reliable for long-term use in high-power applications. The module incorporates design features that mitigate failure mechanisms, such as bias temperature instability (BTI), hot carrier injection (HCI), and time-dependent dielectric breakdown (TDDB), thereby extending its operational life.
In terms of mounting and thermal management, the BSM25GD120DN2E can be equipped with pre-applied thermal interface materials (TIM) for consistent thermal performance. Additionally, it supports solder-less and lead-free mounting techniques using PressFIT pins, which simplifies installation and enhances reliability.
The BSM25GD120DN2E is prominently used in a variety of industrial settings due to its versatile and robust design. This Insulated Gate Bipolar Transistor (IGBT) module is critical in converting electricity from one form to another, which is necessary for the efficient operation of numerous digital devices in modern industrial applications. The integration of micro-pattern trench technology in the module enhances controllability and reduces losses, making it suitable for high-performance environments. In the industrial sector, the BSM25GD120DN2E’s ability to manage high voltage and current levels with significant efficiency is leveraged in applications such as general-purpose drives (GPD) and servo drives. Additionally, its qualification for industrial applications is affirmed by rigorous testing standards, including IEC 60747, 60749, and 60068.
This ensures reliability and durability under various operational conditions. Moreover, the role of IGBT modules like the BSM25GD120DN2E extends to critical applications in renewable energy sectors, including solar inverters and wind energy systems, where they are used to enhance the performance and efficiency of energy conversion processes. The ability to withstand high thermal and electrical stress makes these modules indispensable in maintaining the stability and reliability of renewable energy grids. Given the growing emphasis on energy efficiency and sustainability, the BSM25GD120DN2E and similar IGBT modules are pivotal in supporting the transition to greener industrial processes. They contribute to the reduction of energy losses, thereby improving the overall efficiency and performance of industrial machinery and systems.
The BSM25GD120DN2E is manufactured by EUPEC, a subsidiary of Infineon, which specializes in providing innovative semiconductor products including high power IGBT modules, thyristors, and diodes. EUPEC’s technical expertise ensures high-quality products and services for customers. This particular IGBT module is available in a Module Package and forms a critical component in high-performance power conversion circuitry. Quality testing for the BSM25GD120DN2E adheres to stringent standards, including the IEC 60747, IEC 60749, and IEC 60068.
These standards ensure that the module meets industrial requirements for performance and reliability. EUPEC’s comprehensive quality control protocols guarantee that each product, such as the BSM25GD120DN2E, upholds the high standards expected in the semiconductor industry. To facilitate efficient manufacturing, the semiconductor industry is increasingly integrating digital tools, novel materials, and design solutions, which also contribute to sustainable manufacturing practices. These innovations help balance rapid technological advancement with ecological considerations, further enhancing the quality and sustainability of semiconductor products like the BSM25GD120DN2E.
The BSM25GD120DN2E, like other Insulated Gate Bipolar Transistors (IGBTs), boasts significant reliability and safety features that make it an ideal choice for high-power applications. IGBTs combine the high current carrying capabilities and high blocking voltages of a bipolar transistor with the capacitive, almost zero-power control of a MOSFET. These attributes contribute to their robustness and reliability in various applications such as variable-frequency drives (VFDs) for motor control in electric cars, trains, and industrial equipment.
IGBTs are designed to withstand very high voltages, making them suitable for applications exceeding 600V. One critical aspect of their reliability is the incorporation of a freewheeling diode, which is not inherently part of the IGBT design but is essential to protect the switch and provide a freewheeling path to prevent reverse current. This feature enhances the durability and operational safety of the device. Another aspect contributing to the reliability of IGBTs is their large safe operating area, which makes them one of the most rugged and strong power devices available today. This characteristic allows for ease of use and has led to the displacement of bipolar transistors and gate turn-off thyristors (GTOs) in many applications. Additionally, IGBT modules, such as the one in question, often have a rated current and maximum voltage specifications (e.g., 1200 A and 3300 V), which further underline their robustness.
Safety features are also paramount in the design of IGBT-based systems. Gate drive circuits for power inverters and converters, which often employ IGBTs, require electrical isolation for functional and safety purposes. This isolation is mandated by regulatory and safety certification agencies to prevent shock hazards and protect low voltage electronics from faults on the high power side, as well as from human error on the control side. This separation ensures that individual circuits can possess different ground potentials without direct conduction paths between them, further enhancing system safety.
The environmental impact of semiconductor manufacturing has become an area of significant focus, particularly with regard to sustainability in the production phase. Recent advancements in IGBT and Free-Wheeling Diode (FWD) design and production have led to the construction of Life Cycle Assessment (LCA) models to simulate the environmental footprint of commercial silicon IGBT power modules. These models identify the most dominant environmental impacts during the device’s manufacturing phase. IGBT power modules are essential for converting electricity to forms that can be efficiently used by digital devices. However, the conversion process results in heat loss, with losses reaching up to 5% in some cases. In electric vehicles, these losses may be as high as 10-15%, directly affecting the vehicle’s range and performance.
Therefore, enhancing the energy efficiency of these power modules is critical for improving the overall sustainability and performance of electrical cars. Danfoss has played a crucial role in this domain by developing customized IGBT and SiC power modules for industrial, e-mobility, and energy applications. Their innovations aim to meet stringent reliability, design, and cost targets, further contributing to energy efficiency and sustainability in power semiconductor applications.
The key to improving the environmental performance of IGBT modules lies in reducing their switching losses. Total switching loss (Ets), which comprises turn-on (Eon) and turn-off (Eoff) losses, can be substantial, especially at higher switching frequencies and elevated operational temperatures. Minimizing these losses is vital for enhancing the power efficiency and reducing the environmental impact of IGBT modules.
The BSM25GD120DN2E module is widely recognized and utilized in various high-power applications. As a product of EUPEC, a 100% subsidiary of Infineon, it benefits from the company’s extensive portfolio of semiconductor solutions, including IGBT high power and standard modules, thyristors, and diodes.
Infineon’s products are known for their superior quality and technical expertise, making the BSM25GD120DN2E a reliable choice for diverse industries. Infineon’s IGBT power modules, including the BSM25GD120DN2E, are particularly suitable for general-purpose drives (GPD), servo drives, electric vehicle (EV) charging, and renewable energy applications such as solar inverters and wind energy. This adaptability across different sectors underlines the module’s market presence and significance. Moreover, the BSM25GD120DN2E is readily available from various electronic component distributors. These distributors provide instant results for stock availability and pricing, ensuring that customers can quickly and easily procure the module for their specific needs.
This broad accessibility further enhances the module’s market penetration and reliability in fulfilling industrial demands. Additionally, the BSM25GD120DN2E is qualified for industrial applications according to the rigorous tests of IEC 60747, 60749, and 60068, ensuring its compliance with high industry standards and reliability. This compliance underscores its robust market presence, providing assurance to consumers about its performance and longevity in various applications.
IGBT (Insulated Gate Bipolar Transistor) modules have undergone significant advancements since their inception. Initially, early IGBT devices were plagued by “latch-up,” a condition that caused device destruction or failure. This issue was resolved in 1984 with the development of the non-latch-up IGBT, marking a significant milestone in the evolution of these devices.
IGBT modules are available in a variety of configurations such as chopper, dual, PIM, fourpack, sixpack, twelvepack, 3-level, booster, or single switch, with current ratings ranging from 6 A to 3600 A. These modules cover a wide range of power needs from hundreds of watts to several megawatts, making them highly versatile for different applications. They are designed to provide efficient, high-speed, and high-power energy conversion and are essential in applications such as motor control, power supplies, and power inverters .
The introduction of pre-applied thermal interface material (TIM) in IGBT modules has further improved their thermal performance, enhancing the reliability and efficiency of power electronic applications. Different product families and configurations have been developed, including the well-known 62 mm, Easy and Econo families, IHM / IHV B-series, PrimePACK™, and XHP™ power modules. These are all equipped with the latest IGBT technologies to meet an almost infinite number of application requirements. In automotive applications, Infineon has developed advanced IGBT discretes, which provide maximum flexibility and scalability for all power classes. Their AEC-Q101-qualified automotive IGBT portfolio includes the HybridPACK™ and EasyPACK™ product families, which are also equipped with leading IGBT technologies like EDT2.
Recent innovations in IGBT technology include the development of the Partially Narrow Mesa (PNM) -IGBT. This structure combines nanoscale PNM and Superjunction (SJ) technologies to achieve an ultra-low saturation voltage and low turn-off loss, while maintaining other critical device parameters. The PNM-IGBT is noted for its unique gate shape, which enhances performance to approach the theoretical limits of silicon IGBT, significantly improving the Vce(sat)-Eoff trade-off. As the semiconductor industry continues to evolve, IGBT modules are expected to integrate more advanced features and materials to meet the growing demands of various sectors, including renewable energy, industrial robotics, and advanced automotive applications. The continuous innovation in IGBT technology ensures that these modules remain at the forefront of power electronics, driving efficiency and performance across multiple industries.
The future prospects for the BSM25GD120DN2E and similar semiconductor devices are promising, driven by several innovations and industry trends. With the continuous evolution of semiconductor technologies, “More than Moore” approaches are gaining traction, which focus on integrating 3-D design and exploring new materials to enhance electrical performance. This shift aligns with the broader market expectations for sustained innovation in the semiconductor industry. The rise of the Internet of Things (IoT) and Artificial Intelligence (AI) has sparked a new wave of innovation within the semiconductor sector. The IoT market alone is projected to generate between $3.9 to $11.1 trillion in revenue by 2025, underscoring the significant economic impact and demand for advanced semiconductor solutions. As a result, manufacturers that can meet the dual requirements of AI and IoT are expected to dominate future markets.
Additionally, the CHIPS and Science Act underscores the strategic importance of semiconductor design and manufacturing to the U.S. economy. The act includes provisions for substantial investment in semiconductor research and development, emphasizing the need to maintain leadership in global semiconductor innovation. This includes promoting STEM workforce development and ensuring access to global markets, which are vital for sustaining long-term growth and innovation in semiconductor design.
Emerging trends also highlight the importance of personalized chip design and sustainable manufacturing practices. Companies are increasingly adopting in-house design strategies to create application-specific integrated circuits (ASICs) tailored for IoT, AI, and 5G applications. This approach not only enhances performance but also aligns with ecological considerations, promoting a balance between rapid technological advancements and environmental sustainability. One notable innovation is the Partially Narrow Mesa (PNM) Insulated Gate Bipolar Transistor (IGBT), which features a unique gate shape designed to improve performance significantly. The PNM-IGBT can contribute to reduced saturation voltage and enhanced trade-offs between voltage and efficiency, making it adaptable to various practical applications. This breakthrough underscores the ongoing potential for new semiconductor designs to push the boundaries of existing technologies.